N-channel power MOSFET with 8V drain-source voltage and 12A continuous drain current. Features 11mΩ maximum drain-source on-resistance and 1.8nF input capacitance. Operates from -55°C to 150°C with 3.5W maximum power dissipation. Surface mountable in a leadless SC package, this component is halogen-free and RoHS compliant.
PackageSC
MountingSurface Mount
PolarityN-CHANNEL
Power3.5W
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Technical Specifications
Vishay SIA414DJ-T1-GE3 technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Resistance | 11mR |
| Drain to Source Voltage (Vdss) | 8V |
| Drain-source On Resistance-Max | 11MR |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 5V |
| Height | 0.75mm |
| Input Capacitance | 1.8nF |
| Lead Free | Lead Free |
| Length | 2.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.5W |
| Mount | Surface Mount |
| Nominal Vgs | 800mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.5W |
| Radiation Hardening | No |
| Rds On Max | 11mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 800mV |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 12ns |
| Width | 2.05mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIA414DJ-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIA414DJ-T1-GE3 to view detailed technical specifications.
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