N-channel MOSFET featuring 100V drain-source voltage and 11.3A continuous drain current. Offers a low 83mΩ drain-source on-resistance at a 3V gate-source voltage. This surface-mount component, with a compact 2.05mm x 2.05mm x 0.75mm footprint, operates from -55°C to 150°C and supports up to 19W power dissipation. Includes lead-free and RoHS compliance.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIA416DJ-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 11.3A |
| Drain to Source Resistance | 83mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 83MR |
| Gate to Source Voltage (Vgs) | 3V |
| Height | 0.75mm |
| Input Capacitance | 295pF |
| Lead Free | Lead Free |
| Length | 2.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 19W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 83mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1.6V |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 25ns |
| Width | 2.05mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIA416DJ-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIA416DJ-T1-GE3 to view detailed technical specifications.
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