P-channel PowerPAK SC-70 MOSFET with -30V drain-source voltage and 7.9A continuous drain current. Features low 35mΩ drain-source on-resistance at a nominal Vgs of -3V. Designed for surface mounting with a compact 2.05mm x 2.05mm x 0.75mm profile. Offers fast switching speeds with turn-on delay of 40ns and fall time of 12ns. Rated for a maximum power dissipation of 3.5W and operates across a wide temperature range of -55°C to 150°C.
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Vishay SIA421DJ-T1-GE3 technical specifications.
| Package/Case | SC |
| Continuous Drain Current (ID) | 7.9A |
| Drain to Source Resistance | 35mR |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 83MR |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.75mm |
| Input Capacitance | 950pF |
| Lead Free | Lead Free |
| Length | 2.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.5W |
| Mount | Surface Mount |
| Nominal Vgs | -3V |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 35mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -3V |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 40ns |
| Width | 2.05mm |
| RoHS | Compliant |
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