P-Channel Power MOSFET featuring -20V Drain-Source Voltage (Vdss) and 9.6A Continuous Drain Current (ID). Offers a low 25mR maximum Drain-Source On-Resistance (Rds On) at 8V Gate-Source Voltage (Vgs). Designed for surface mount applications with a compact 2.05mm x 2.05mm x 0.75mm package. Includes fast switching characteristics with 22ns turn-on and 65ns turn-off delay times. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 19W.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SIA431DJ-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | -12A |
| Drain to Source Resistance | 70mR |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 25MR |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.75mm |
| Input Capacitance | 1.7nF |
| Lead Free | Lead Free |
| Length | 2.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 19W |
| Mount | Surface Mount |
| Nominal Vgs | -850mV |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 25mR |
| Series | TrenchFET® |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 22ns |
| Width | 2.05mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIA431DJ-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIA431DJ-T1-GE3 to view detailed technical specifications.
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