P-Channel MOSFET with 20V Drain-Source Voltage (Vdss) and 15mΩ maximum Drain-Source On-Resistance (Rds On). Features a continuous drain current of -12A and a maximum power dissipation of 19W. This surface mount component operates within a temperature range of -55°C to 150°C and is packaged in a Tape and Reel format. Includes fast switching characteristics with turn-on delay time of 0.71µs and fall time of 3.2µs.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SIA433EDJ-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | -12A |
| Drain to Source Resistance | 18mR |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 15mR |
| Fall Time | 3.2us |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.75mm |
| Lead Free | Lead Free |
| Length | 2.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 19W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 18mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -500mV |
| Turn-Off Delay Time | 6us |
| Turn-On Delay Time | 0.71us |
| Width | 2.05mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIA433EDJ-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIA433EDJ-T1-GE3 to view detailed technical specifications.
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