N-channel MOSFET with 30V drain-source voltage and 12A continuous drain current. Features low 17mΩ drain-source resistance and 1V threshold voltage. Operates across a -55°C to 150°C temperature range with 19W maximum power dissipation. Surface mountable in a compact 2.05mm x 2.05mm x 0.75mm package, supplied on tape and reel.
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Vishay SIA444DJT-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 12A |
| Drain to Source Resistance | 17mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.75mm |
| Input Capacitance | 560pF |
| Length | 2.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 19W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 17mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 12ns |
| Width | 2.05mm |
| RoHS | Compliant |
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