P-channel MOSFET, TrenchFET® series, designed for general-purpose power applications. Features a continuous drain current of -12A and a drain-to-source breakdown voltage of -20V. Offers a low drain-source on-resistance of 16.5mΩ at a gate-source voltage of 12V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 19W. This surface-mount component is packaged in tape and reel and is RoHS compliant.
MountingSurface Mount
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Vishay SIA445EDJ-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | -12A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 16.5mR |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 16.5mR |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.75mm |
| Input Capacitance | 2.13nF |
| Lead Free | Lead Free |
| Length | 2.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 19W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 16.5mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -500mV |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 25ns |
| Width | 2.05mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIA445EDJ-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIA445EDJ-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
