Power Field-Effect Transistor, 12A I(D), 12V, 0.014ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN
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Vishay SIA477EDJ-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 12V |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 2.97nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 19W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 14mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| RoHS | Compliant |
No datasheet is available for this part.
