N/P-Channel MOSFET with 12V Vdss and 4.5A continuous drain current. Features low 50mR drain-to-source resistance and 29mR Rds On Max. Operates with 8V gate-to-source voltage and 400mV nominal Vgs. This surface mount component offers fast switching with 30ns turn-on and 25ns fall times, and 30ns turn-off delay. Maximum power dissipation is 6.5W, with operating temperatures from -55°C to 150°C. Packaged in tape and reel, this RoHS compliant device is ideal for demanding applications.
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
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Technical Specifications
Vishay SIA517DJ-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Resistance | 50mR |
| Drain to Source Voltage (Vdss) | 12V |
| Fall Time | 25ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.75mm |
| Input Capacitance | 500pF |
| Lead Free | Lead Free |
| Length | 2.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 6.5W |
| Mount | Surface Mount |
| Nominal Vgs | 400mV |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Rds On Max | 29mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 30ns |
| Weight | 0.000988oz |
| Width | 2.05mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIA517DJ-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIA517DJ-T1-GE3 to view detailed technical specifications.
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