N-channel and P-channel MOSFET featuring 20V drain-source voltage and 4.5A continuous drain current. Offers low on-resistance with a maximum of 40mΩ at a 10V gate-source voltage. Designed for surface mounting with a maximum power dissipation of 7.8W and an operating temperature range of -55°C to 150°C. This RoHS compliant component is supplied in tape and reel packaging.
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Vishay SIA519EDJ-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Resistance | 74mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 40MR |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 350pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 7.8W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 40mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 600mV |
| Weight | 0.000988oz |
| RoHS | Compliant |
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