P-channel MOSFET, 20V Vdss, with a continuous drain current of 4.5A and a maximum power dissipation of 6.5W. Features low on-resistance of 116mR (Rds On Max) and 165mR (Drain to Source Resistance). Designed for surface mount applications with a compact 2.05mm x 2.05mm x 0.75mm footprint. Operates across a wide temperature range from -55°C to 150°C, with fast switching characteristics including turn-on delay of 15ns and fall time of 10ns.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SIA811ADJ-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Resistance | 165mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.75mm |
| Input Capacitance | 345pF |
| Length | 2.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 6.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 116mR |
| RoHS Compliant | Yes |
| Series | LITTLE FOOT® |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 15ns |
| Weight | 0.000988oz |
| Width | 2.05mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIA811ADJ-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIA811ADJ-T1-GE3 to view detailed technical specifications.
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