Trans MOSFET N-CH 190V 0.47A 6-Pin PowerPAK SC-70 T/R
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power7W
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Technical Specifications
Vishay SIA850DJ-T1-GE3 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 950mA |
| Drain to Source Breakdown Voltage | 190V |
| Drain to Source Resistance | 3.5R |
| Drain to Source Voltage (Vdss) | 190V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 90pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 7W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 7W |
| Radiation Hardening | No |
| Rds On Max | 3.8R |
| RoHS Compliant | Yes |
| Series | LITTLE FOOT® |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 10ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIA850DJ-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIA850DJ-T1-GE3 to view detailed technical specifications.
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