N-Channel TrenchFET® MOSFET, 20V Drain-Source Voltage, 4.5A Continuous Drain Current. Features 46mΩ Max Drain-Source On Resistance and 7.8W Max Power Dissipation. Operates across a -55°C to 150°C temperature range. This surface mount component utilizes a TSSOP package with dimensions of 2.05mm length and 2.05mm width, standing 0.75mm high. Includes 2 N-Channel FETs with 350pF input capacitance and fast switching times (5ns turn-on, 15ns turn-off, 12ns fall time).
PackageTSSOP
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIA906EDJ-T1-GE3 technical specifications.
General
Package/Case
TSSOP
Continuous Drain Current (ID)
4.5A
Drain to Source Resistance
46mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
46mR
Fall Time
12ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
12V
Height
0.75mm
Input Capacitance
350pF
Lead Free
Lead Free
Length
2.05mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
7.8W
Mount
Surface Mount
Number of Channels
2
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
46mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
15ns
Turn-On Delay Time
5ns
Weight
0.000988oz
Width
2.05mm
Compliance
RoHS
Compliant
Datasheet
Vishay SIA906EDJ-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIA906EDJ-T1-GE3 to view detailed technical specifications.
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