N-channel Power MOSFET featuring TrenchFET technology. This 6-pin, surface-mount device in a PowerPAK SC-70 package offers a 12V drain-source voltage and 4.5A continuous drain current. It boasts a low drain-source on-resistance of 28mOhm at 4.5V and a typical gate charge of 10.5nC at 8V. The dual configuration and compact 2.05mm x 2.05mm x 0.75mm dimensions make it suitable for space-constrained applications.
PackagePowerPAK SC-70
MountingSurface Mount
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Technical Specifications
Vishay SiA910EDJ-T1-GE3 technical specifications.
General
Package Family Name
SOT
Package/Case
PowerPAK SC-70
Pin Count
6
PCB
6
Package Length (mm)
2.05
Package Width (mm)
2.05
Package Height (mm)
0.75
Seated Plane Height (mm)
0.75
Pin Pitch (mm)
0.65
Package Material
Plastic
Mounting
Surface Mount
Configuration
Dual
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Process Technology
TrenchFET
Maximum Drain Source Voltage
12V
Maximum Gate Source Voltage
±8V
Maximum Continuous Drain Current
4.5A
Maximum Gate Threshold Voltage
1V
Maximum Drain Source Resistance
Typical Gate Charge @ Vgs
10.5@8V|[email protected]nC
Typical Input Capacitance @ Vds
455@6VpF
Maximum Power Dissipation
1900mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
18612
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Vishay SiA910EDJ-T1-GE3 Datasheet
Download the complete datasheet for Vishay SiA910EDJ-T1-GE3 to view detailed technical specifications.
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