N-channel Power MOSFET featuring TrenchFET technology. This 6-pin, surface-mount device in a PowerPAK SC-70 package offers a 12V drain-source voltage and 4.5A continuous drain current. It boasts a low drain-source on-resistance of 28mOhm at 4.5V and a typical gate charge of 10.5nC at 8V. The dual configuration and compact 2.05mm x 2.05mm x 0.75mm dimensions make it suitable for space-constrained applications.
PackagePowerPAK SC-70
MountingSurface Mount
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Technical Specifications
Vishay SiA910EDJ-T1-GE3 technical specifications.
General
| Package Family Name | SOT |
| Package/Case | PowerPAK SC-70 |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 2.05 |
| Package Width (mm) | 2.05 |
| Package Height (mm) | 0.75 |
| Seated Plane Height (mm) | 0.75 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Dual |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Process Technology | TrenchFET |
| Maximum Drain Source Voltage | 12V |
| Maximum Gate Source Voltage | ±8V |
| Maximum Continuous Drain Current | 4.5A |
| Maximum Gate Threshold Voltage | 1V |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Gate Charge @ Vgs | 10.5@8V|[email protected]nC |
| Typical Input Capacitance @ Vds | 455@6VpF |
| Maximum Power Dissipation | 1900mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 18612 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Vishay SiA910EDJ-T1-GE3 Datasheet
Download the complete datasheet for Vishay SiA910EDJ-T1-GE3 to view detailed technical specifications.
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