Dual N-Channel MOSFET featuring 20V drain-source voltage and 43mΩ drain-source resistance at 10V gate-source voltage. Offers 4.5A continuous drain current and 7.8W maximum power dissipation. Surface mountable in a PowerPAK SC-70-6 dual package, this RoHS compliant component operates from -55°C to 150°C with fast switching characteristics including a 7ns turn-on delay and 5ns fall time.
MountingSurface Mount
PolarityN-CHANNEL
Power1.9W
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Technical Specifications
Vishay SIA914ADJ-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Resistance | 47mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 5ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 470pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 7.8W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.9W |
| Radiation Hardening | No |
| Rds On Max | 43mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 7ns |
| Weight | 0.000988oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIA914ADJ-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIA914ADJ-T1-GE3 to view detailed technical specifications.
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