Dual P-Channel MOSFET, 20V Drain-Source Voltage, 4.5A Continuous Drain Current, 59mΩ Max Drain-Source On Resistance. Features a 5ns turn-on delay and 10ns fall time. Surface mountable in a compact TSOP package, operating from -55°C to 150°C. RoHS compliant and lead-free.
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Vishay SIA921EDJ-T1-GE3 technical specifications.
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Resistance | 59mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 59MR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.75mm |
| Lead Free | Lead Free |
| Length | 2.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 7.8W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.9W |
| Radiation Hardening | No |
| Rds On Max | 59mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 5ns |
| Weight | 0.000988oz |
| Width | 2.05mm |
| RoHS | Compliant |
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