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Vishay SIA922EDJ-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Resistance | 64mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 45ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 7.8W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 64mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 25ns |
| RoHS | Compliant |
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