P-channel MOSFET with a -12V Drain-to-Source Voltage (Vdss) and a continuous drain current of -4.5A. Features a low Drain-Source On-Resistance (Rds On) of 41mR, enabling efficient power handling up to 7.8W. Operates across a wide temperature range from -55°C to 150°C. This surface-mount device offers fast switching characteristics with a turn-on delay of 22ns and a fall time of 15ns. It is RoHS compliant and packaged in tape and reel for automated assembly.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SIA975DJ-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | -4.5A |
| Drain to Source Resistance | 41mR |
| Drain to Source Voltage (Vdss) | -12V |
| Drain-source On Resistance-Max | 41mR |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 1.5nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 7.8W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 41mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -400mV |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 22ns |
| Weight | 0.000988oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIA975DJ-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIA975DJ-T1-GE3 to view detailed technical specifications.
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