P-channel MOSFET with -8V Drain-Source Voltage (Vdss) and -9A Continuous Drain Current (ID). Features low 58mR Rds On, 150°C max operating temperature, and 2.4W max power dissipation. Surface mountable in a compact SC package (1.6mm x 1.6mm x 0.75mm). Includes fast switching characteristics with 12ns turn-on delay and 17ns fall time. RoHS compliant.
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Vishay SIB417EDK-T1-GE3 technical specifications.
| Package/Case | SC |
| Continuous Drain Current (ID) | -9A |
| Drain to Source Resistance | 150mR |
| Drain to Source Voltage (Vdss) | -8V |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 5V |
| Height | 0.75mm |
| Input Capacitance | 565pF |
| Length | 1.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.4W |
| Mount | Surface Mount |
| Nominal Vgs | -1V |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 58mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.003386oz |
| Width | 1.6mm |
| RoHS | Compliant |
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