The SIB433EDK-T1-GE3 is a P-channel TrenchFET MOSFET from Vishay with a maximum drain to source voltage of -20V and a continuous drain current of -9A. It features a maximum drain to source resistance of 47mR and a maximum on-resistance of 58mR. The device is designed for surface mount applications and has a maximum operating temperature range of -55°C to 150°C. It is compliant with RoHS regulations and is available in a tape and reel packaging.
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Vishay SIB433EDK-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | -9A |
| Drain to Source Resistance | 47mR |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 58mR |
| Gate to Source Voltage (Vgs) | 8V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 13W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.4W |
| Radiation Hardening | No |
| Rds On Max | 58mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -400mV |
| Weight | 0.003386oz |
| RoHS | Compliant |
Download the complete datasheet for Vishay SIB433EDK-T1-GE3 to view detailed technical specifications.
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