The SiB441EDK-T1-GE3 is a P-CHANNEL TrenchFET MOSFET with a drain to source breakdown voltage of 12V and a continuous drain current of 9A. It features a maximum operating temperature range of -55°C to 150°C and is RoHS compliant. The device has a maximum power dissipation of 13W and is packaged in a surface mount configuration.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Vishay SiB441EDK-T1-GE3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Vishay SiB441EDK-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 9A |
| Drain to Source Breakdown Voltage | -12V |
| Drain to Source Resistance | 115mR |
| Drain to Source Voltage (Vdss) | 12V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 1.18nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 13W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 13W |
| Radiation Hardening | No |
| Rds On Max | 25.5mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 60ns |
| RoHS | Compliant |
Download the complete datasheet for Vishay SiB441EDK-T1-GE3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
