N-channel MOSFET, 190V drain-source voltage, 1.5A continuous drain current, and 2.4 Ohm drain-source on-resistance. Features a 1.5V threshold voltage, 135pF input capacitance, and fast switching times with 12ns turn-on delay and 30ns turn-off delay. Operates from -55°C to 150°C with a maximum power dissipation of 13W. Surface mountable in a compact SC75-6 package, this RoHS compliant component is ideal for demanding applications.
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Vishay SIB452DK-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 1.5A |
| Drain to Source Resistance | 2.4R |
| Drain to Source Voltage (Vdss) | 190V |
| Drain-source On Resistance-Max | 2.4R |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 0.75mm |
| Input Capacitance | 135pF |
| Lead Free | Lead Free |
| Length | 1.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 13W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 2.4R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1.5V |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.003386oz |
| Width | 1.6mm |
| RoHS | Compliant |
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