SIB452DK-T1-GE3

N-CH MOSFET 190V 1.5A 2.4R SC75-6 SM

N-channel MOSFET, 190V drain-source voltage, 1.5A continuous drain current, and 2.4 Ohm drain-source on-resistance. Features a 1.5V threshold voltage, 135pF input capacitance, and fast switching times with 12ns turn-on delay and 30ns turn-off delay. Operates from -55°C to 150°C with a maximum power dissipation of 13W. Surface mountable in a compact SC75-6 package, this RoHS compliant component is ideal for demanding applications.

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Vishay SIB452DK-T1-GE3 technical specifications.

General

Continuous Drain Current (ID)	1.5A
Drain to Source Resistance	2.4R
Drain to Source Voltage (Vdss)	190V
Drain-source On Resistance-Max	2.4R
Fall Time	15ns
Gate to Source Voltage (Vgs)	16V
Height	0.75mm
Input Capacitance	135pF
Lead Free	Lead Free
Length	1.6mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	13W
Mount	Surface Mount
Number of Channels	1
Package Quantity	3000
Packaging	Tape and Reel
Polarity	N-CHANNEL
Radiation Hardening	No
Rds On Max	2.4R
Reach SVHC Compliant	Unknown
RoHS Compliant	Yes
Series	TrenchFET®
Threshold Voltage	1.5V
Turn-Off Delay Time	30ns
Turn-On Delay Time	12ns
Weight	0.003386oz
Width	1.6mm