P-channel PowerPAK SC-75 MOSFET with 20V drain-source voltage and 6.8A continuous drain current. Features low 35mΩ drain-source on-resistance and 2.4W maximum power dissipation. Operates from -55°C to 150°C, ideal for surface mount applications. Includes fast switching times with turn-on delay of 0.34µs and fall time of 1.9µs. RoHS compliant and lead-free.
MountingSurface Mount
PolarityP-CHANNEL
Power2.4W
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Technical Specifications
Vishay SIB457EDK-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 6.8A |
| Drain to Source Resistance | 35mR |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 35mR |
| Fall Time | 1.9us |
| Gate to Source Voltage (Vgs) | 8V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.4W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.4W |
| Rds On Max | 35mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 3us |
| Turn-On Delay Time | 0.34us |
| Weight | 0.003386oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIB457EDK-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIB457EDK-T1-GE3 to view detailed technical specifications.
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