Dual N-Channel MOSFET, TrenchFET® series, featuring 20V Drain to Source Voltage (Vdss) and 1.5A Continuous Drain Current (ID). Offers low 180mR Drain to Source Resistance and 216mR Rds On Max. Surface mountable with a compact 1.6mm x 1.6mm x 0.75mm footprint, operating from -55°C to 150°C. Includes fast switching characteristics with 5ns Turn-On Delay Time and 10ns Fall Time. Packaged in Tape and Reel, RoHS compliant.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Vishay SIB912DK-T1-GE3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Vishay SIB912DK-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 1.5A |
| Drain to Source Resistance | 180mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 10ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.75mm |
| Input Capacitance | 95pF |
| Length | 1.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 216mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 400mV |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 5ns |
| Weight | 0.003386oz |
| Width | 1.6mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay SIB912DK-T1-GE3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
