Dual N-Channel MOSFET, TrenchFET® series, featuring 20V Drain to Source Voltage (Vdss) and 1.5A Continuous Drain Current (ID). Offers low 180mR Drain to Source Resistance and 216mR Rds On Max. Surface mountable with a compact 1.6mm x 1.6mm x 0.75mm footprint, operating from -55°C to 150°C. Includes fast switching characteristics with 5ns Turn-On Delay Time and 10ns Fall Time. Packaged in Tape and Reel, RoHS compliant.
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay SIB912DK-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
1.5A
Drain to Source Resistance
180mR
Drain to Source Voltage (Vdss)
20V
Fall Time
10ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
8V
Height
0.75mm
Input Capacitance
95pF
Length
1.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.1W
Mount
Surface Mount
Number of Channels
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
216mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
400mV
Turn-Off Delay Time
24ns
Turn-On Delay Time
5ns
Weight
0.003386oz
Width
1.6mm
Compliance
RoHS
Compliant
Datasheet
Vishay SIB912DK-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIB912DK-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
