N-channel Power MOSFET featuring low on-resistance and high switching speed. Designed for efficient power management applications, this device offers excellent thermal performance and robust reliability. Its advanced trench technology ensures superior conductivity and reduced power loss. Ideal for use in power supplies, motor control, and DC-DC converters.
Vishay SIDR870ADP-T1-GE3 technical specifications.
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for Vishay SIDR870ADP-T1-GE3 to view detailed technical specifications.
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