N-CHANNEL MOSFET featuring 30V drain-source breakdown voltage and 1.7mΩ maximum drain-source on-resistance at 10V gate-source voltage. This surface-mount component offers a continuous drain current of 41.3A and a maximum power dissipation of 125W. It operates within a temperature range of -55°C to 150°C, with a typical fall time of 10ns and turn-off delay time of 85ns. The device is RoHS compliant and packaged on tape and reel.
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| Continuous Drain Current (ID) | 41.3A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 1.7mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 1.7mR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 13nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 5.2W |
| Radiation Hardening | No |
| Rds On Max | 1.7mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1.3V |
| Turn-Off Delay Time | 85ns |
| RoHS | Compliant |
