N-channel MOSFET featuring 30V drain-source breakdown voltage and 44.5A continuous drain current. Offers a low 7mΩ drain-source resistance at a nominal 3V gate-source voltage. Designed for surface mounting with a 10ns fall time and 25ns turn-on/off delay times. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 5.2W.
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Vishay SIE844DF-T1-E3 technical specifications.
| Continuous Drain Current (ID) | 44.5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 7mR |
| Drain to Source Voltage (Vdss) | 30V |
| Dual Supply Voltage | 30V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.15nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 5.2W |
| Mount | Surface Mount |
| Nominal Vgs | 3V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 5.2W |
| Radiation Hardening | No |
| Rds On Max | 7mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Termination | SMD/SMT |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 25ns |
| RoHS | Compliant |
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