The SIE848DF-T1-E3 is a surface mount N-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -50°C. It has a maximum power dissipation of 125W and is RoHS compliant. The device features a drain to source breakdown voltage of 30V and a drain to source resistance of 1.6mR. It also has a gate to source voltage of 20V and an input capacitance of 6.1nF.
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| Continuous Drain Current (ID) | 43A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 1.6mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 2.2MR |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 6.1nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Max Power Dissipation | 125W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 5.2W |
| Radiation Hardening | No |
| Rds On Max | 1.6mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 70ns |
| Turn-On Delay Time | 45ns |
| RoHS | Compliant |
