N-channel MOSFET with 100V drain-source breakdown voltage and 14.2mΩ maximum drain-source on-resistance. Features 60A continuous drain current capability and 5.2W maximum power dissipation. Operates across a temperature range of -50°C to 150°C. Surface mountable in a POLARPAK package, supplied on tape and reel. RoHS compliant.
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Vishay SIE854DF-T1-E3 technical specifications.
| Continuous Drain Current (ID) | 13.2A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 14.2mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 14.2mR |
| Dual Supply Voltage | 100V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.1nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Max Power Dissipation | 5.2W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 5.2W |
| Radiation Hardening | No |
| Rds On Max | 14.2mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Termination | SMD/SMT |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 15ns |
| RoHS | Compliant |
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