N-channel Power MOSFET featuring a 30V drain-source voltage and 178A continuous drain current. This surface-mount component utilizes a 10-pin PolarPAK package with dimensions of 6.15mm x 5.16mm x 0.8mm. Key electrical characteristics include a low 21mOhm drain-source resistance at 10V and typical gate charges of 70nC at 10V and 34nC at 4.5V. Operating temperature range spans from -55°C to 150°C, with a maximum power dissipation of 5200mW.
PackagePolarPAK
MountingSurface Mount
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Technical Specifications
Vishay SiE860DF technical specifications.
General
| Package Family Name | PolarPAK |
| Package/Case | PolarPAK |
| Pin Count | 10 |
| PCB | 10 |
| Package Length (mm) | 6.15 |
| Package Width (mm) | 5.16 |
| Package Height (mm) | 0.8 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Dual Gate Quad Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 178A |
| Material | Si |
| Maximum Drain Source Resistance | 21@10VmOhm |
| Typical Gate Charge @ Vgs | 70@10V|[email protected]nC |
| Typical Gate Charge @ 10V | 70nC |
| Typical Input Capacitance @ Vds | 4500@15VpF |
| Maximum Power Dissipation | 5200mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 18612 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Vishay SiE860DF Datasheet
Download the complete datasheet for Vishay SiE860DF to view detailed technical specifications.
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