
N-channel enhancement mode power MOSFET in a 10-pin PolarPAK surface-mount package. Features a maximum drain-source voltage of 30V and a maximum continuous drain current of 45A. Offers low drain-source on-resistance of 5.6 mOhm at 10V gate-source voltage. Includes typical gate charge of 11.9 nC at 4.5V and 1510 pF input capacitance at 15V drain-source voltage. Maximum power dissipation is 5200 mW, with an operating temperature range of -55°C to 150°C.
Vishay SiE864DF technical specifications.
| Package Family Name | PolarPAK |
| Package/Case | PolarPAK |
| Pin Count | 10 |
| PCB | 10 |
| Package Length (mm) | 6.15 |
| Package Width (mm) | 5.16 |
| Package Height (mm) | 0.8 |
| Seated Plane Height (mm) | 0.8 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Dual Gate Quad Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 45A |
| Maximum Drain Source Resistance | 5.6@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]|25@10VnC |
| Typical Gate Charge @ 10V | 25nC |
| Typical Input Capacitance @ Vds | 1510@15VpF |
| Maximum Power Dissipation | 5200mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 18612 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Download the complete datasheet for Vishay SiE864DF to view detailed technical specifications.
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