N-channel MOSFET transistor featuring a 500V drain-source voltage (Vdss) and 16A continuous drain current (ID). This through-hole component offers a low drain-source on-resistance (Rds On) of 310mR and a threshold voltage of 3V. Designed for efficient switching, it exhibits turn-on delay time of 27ns and fall time of 31ns. The TO-220-3 package supports a maximum power dissipation of 38W and operates within a temperature range of -55°C to 150°C.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power38W
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Technical Specifications
Vishay SiHF16N50C-E3 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Resistance | 310mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 31ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.9nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 38W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 38W |
| Radiation Hardening | No |
| Rds On Max | 380mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 29ns |
| Turn-On Delay Time | 27ns |
| Weight | 0.211644oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SiHF16N50C-E3 Datasheet
Download the complete datasheet for Vishay SiHF16N50C-E3 to view detailed technical specifications.
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