N-channel enhancement mode power MOSFET, TO-262 package, featuring 200V drain-source voltage and 18A continuous drain current. This single-element transistor offers a low 180mOhm maximum drain-source resistance at 10V Vgs. With a maximum power dissipation of 130W and a typical gate charge of 70nC at 10V, it is designed for through-hole mounting. Operating temperature range spans from -55°C to 150°C.
PackageTO-262
MountingThrough Hole
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Technical Specifications
Vishay SiHF640L technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | I2PAK |
| Package/Case | TO-262 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.67(Max) |
| Package Width (mm) | 4.83(Max) |
| Package Height (mm) | 9.65(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-262AA |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 200V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 18A |
| Maximum Drain Source Resistance | 180@10VmOhm |
| Typical Gate Charge @ Vgs | 70(Max)@10VnC |
| Typical Gate Charge @ 10V | 70(Max)nC |
| Typical Input Capacitance @ Vds | 1300@25VpF |
| Maximum Power Dissipation | 130000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 18612 |
| EU RoHS | No |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Vishay SiHF640L Datasheet
Download the complete datasheet for Vishay SiHF640L to view detailed technical specifications.
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