N-channel power MOSFET, 200V drain-source voltage, 18A continuous drain current. Features 180mOhm maximum drain-source resistance at 10V, 70nC typical gate charge at 10V, and 1300pF typical input capacitance at 25V. Housed in a 3-pin TO-262 package with through-hole mounting and a plastic package material. Maximum power dissipation is 130W, with an operating temperature range of -55°C to 150°C.
PackageTO-262
MountingThrough Hole
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Technical Specifications
Vishay SiHF640L-E3 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | I2PAK |
| Package/Case | TO-262 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.67(Max) |
| Package Width (mm) | 4.83(Max) |
| Package Height (mm) | 9.65(Max) |
| Seated Plane Height (mm) | 9.65(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-262AA |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 200V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 18A |
| Maximum Drain Source Resistance | 180@10VmOhm |
| Typical Gate Charge @ Vgs | 70(Max)@10VnC |
| Typical Gate Charge @ 10V | 70(Max)nC |
| Typical Input Capacitance @ Vds | 1300@25VpF |
| Maximum Power Dissipation | 130000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 18612 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Vishay SiHF640L-E3 Datasheet
Download the complete datasheet for Vishay SiHF640L-E3 to view detailed technical specifications.
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