N-channel Power MOSFET featuring a 600V drain-source voltage and 0.32A continuous drain current. This single enhancement-mode MOSFET is housed in a 4-pin HVMDIP through-hole package with a 2.54mm pin pitch. It offers a maximum drain-source on-resistance of 4400 mOhm at 10V and a maximum power dissipation of 1000mW. Operating temperature range spans from -55°C to 150°C.
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Vishay SiHFDC20-E3 technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | DIP |
| Package/Case | HVMDIP |
| Lead Shape | Through Hole |
| Pin Count | 4 |
| PCB | 4 |
| Package Length (mm) | 5(Max) |
| Package Width (mm) | 6.29(Max) |
| Package Height (mm) | 3.37(Max) |
| Seated Plane Height (mm) | 4.57(Max) |
| Pin Pitch (mm) | 2.54 |
| Mounting | Through Hole |
| Configuration | Single Dual Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 0.32A |
| Maximum Drain Source Resistance | 4400@10VmOhm |
| Typical Gate Charge @ Vgs | 18(Max)@10VnC |
| Typical Gate Charge @ 10V | 18(Max)nC |
| Typical Input Capacitance @ Vds | 350@25VpF |
| Maximum Power Dissipation | 1000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 18612 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
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