N-channel enhancement mode power MOSFET, 200V drain-source voltage, 20A continuous drain current. Features a TO-247AC package with 3 pins and a tab, designed for through-hole mounting. Maximum power dissipation of 150W, with a low 180mOhm drain-source resistance at 10V gate-source voltage. Operating temperature range from -55°C to 150°C.
PackageTO-247AC
MountingThrough Hole
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Technical Specifications
Vishay SiHFP240-E3 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-247
Package/Case
TO-247AC
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
15.87(Max)
Package Width (mm)
5.31(Max)
Package Height (mm)
20.82(Max)
Seated Plane Height (mm)
25.11(Max)
Pin Pitch (mm)
5.46
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-247AC
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
200V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
20A
Maximum Gate Threshold Voltage
4V
Maximum Drain Source Resistance
180@10VmOhm
Typical Gate Charge @ Vgs
70(Max)@10VnC
Typical Gate Charge @ 10V
70(Max)nC
Typical Input Capacitance @ Vds
1300@25VpF
Maximum Power Dissipation
150000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Typical Output Capacitance
400pF
Compliance
Cage Code
18612
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Vishay SiHFP240-E3 Datasheet
Download the complete datasheet for Vishay SiHFP240-E3 to view detailed technical specifications.
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