N-channel Power MOSFET featuring 600V drain-source voltage and 11A continuous drain current. This single-element enhancement mode transistor is housed in a TO-247AC package with 3 through-hole pins and a tab. Key specifications include a maximum drain-source resistance of 580 mOhm at 10V, typical gate charge of 70 nC at 10V, and typical input capacitance of 2100 pF at 25V. Maximum power dissipation is 180W, with an operating temperature range of -55°C to 150°C.
PackageTO-247AC
MountingThrough Hole
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Technical Specifications
Vishay SiHFPC50A-E3 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-247 |
| Package/Case | TO-247AC |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.87(Max) |
| Package Width (mm) | 5.31(Max) |
| Package Height (mm) | 20.82(Max) |
| Seated Plane Height (mm) | 25.11(Max) |
| Pin Pitch (mm) | 5.46 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-247AC |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 11A |
| Maximum Drain Source Resistance | 580@10VmOhm |
| Typical Gate Charge @ Vgs | 70(Max)@10VnC |
| Typical Gate Charge @ 10V | 70(Max)nC |
| Typical Input Capacitance @ Vds | 2100@25VpF |
| Maximum Power Dissipation | 180000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 18612 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Vishay SiHFPC50A-E3 Datasheet
Download the complete datasheet for Vishay SiHFPC50A-E3 to view detailed technical specifications.
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