N-channel enhancement mode power MOSFET featuring 500V drain-source voltage and 47A continuous drain current. This single-element transistor offers a low 90mΩ maximum drain-source resistance at 10V Vgs. Housed in a 3-pin Super-247 package (TO-274AA) with through-hole mounting, it supports a maximum power dissipation of 540,000mW and operates from -55°C to 150°C.
Vishay SiHFPS43N50K-E3 technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | TO-274-AA |
| Package/Case | Super-247 |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 16.1(Max) |
| Package Width (mm) | 5.3(Max) |
| Package Height (mm) | 20.8(Max) |
| Pin Pitch (mm) | 5.45 |
| Mounting | Through Hole |
| Jedec | TO-274AA |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 500V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 47A |
| Maximum Drain Source Resistance | 90@10VmOhm |
| Typical Gate Charge @ Vgs | 350(Max)@10VnC |
| Typical Gate Charge @ 10V | 350(Max)nC |
| Typical Input Capacitance @ Vds | 8310@25VpF |
| Maximum Power Dissipation | 540000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 18612 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Download the complete datasheet for Vishay SiHFPS43N50K-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.