P-channel enhancement mode Power MOSFET, 60V drain-source voltage, 8.8A continuous drain current. Features 280mOhm maximum drain-source resistance at 10V Vgs, 4V gate threshold voltage, and 19nC typical gate charge. Housed in a 3-pin TO-252 DPAK surface-mount package with a maximum seated plane height of 2.52mm. Operating temperature range from -55°C to 150°C.
Vishay SiHFR9024T technical specifications.
| Package Family Name | TO-252 |
| Package/Case | DPAK |
| Package Description | Deca Watt Package |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.73(Max) |
| Package Width (mm) | 6.22(Max) |
| Package Height (mm) | 2.38(Max) |
| Seated Plane Height (mm) | 2.52(Max) |
| Pin Pitch (mm) | 2.28 |
| Package Weight (g) | 0.3 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-252AA |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 8.8A |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 280@10VmOhm |
| Typical Gate Charge @ Vgs | 19(Max)@10VnC |
| Typical Gate Charge @ 10V | 19(Max)nC |
| Typical Input Capacitance @ Vds | 570@25VpF |
| Maximum Power Dissipation | 2500mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 18612 |
| EU RoHS | No |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
No datasheet is available for this part.
