P-channel Power MOSFET, surface mount, in a TO-252 DPAK package. Features 400V drain-source voltage, 1.8A continuous drain current, and ±20V gate-source voltage. Maximum drain-source resistance is 7000 mOhm at 10V. Operating temperature range from -55°C to 150°C. Deca Watt Package with 3 pins and a tab.
PackageDPAK
MountingSurface Mount
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Technical Specifications
Vishay SiHFR9310T-E3 technical specifications.
General
Package Family Name
TO-252
Package/Case
DPAK
Package Description
Deca Watt Package
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
6.73(Max)
Package Width (mm)
6.22(Max)
Package Height (mm)
2.38(Max)
Seated Plane Height (mm)
2.52(Max)
Pin Pitch (mm)
2.28
Package Weight (g)
0.3
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-252AA
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
400V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
1.8A
Material
Si
Maximum Gate Threshold Voltage
4V
Maximum Drain Source Resistance
7000@10VmOhm
Typical Gate Charge @ Vgs
13(Max)@10VnC
Typical Gate Charge @ 10V
13(Max)nC
Typical Input Capacitance @ Vds
270@25VpF
Maximum Power Dissipation
50000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Typical Output Capacitance
50pF
Compliance
Cage Code
18612
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Vishay SiHFR9310T-E3 Datasheet
Download the complete datasheet for Vishay SiHFR9310T-E3 to view detailed technical specifications.
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