P-channel Power MOSFET, featuring a 400V maximum drain-source voltage and 1.8A maximum continuous drain current. This single-element silicon MOSFET operates in enhancement mode with a ±20V gate-source voltage rating. Housed in a TO-251AA (IPAK) plastic package with through-hole mounting, it offers a 3-pin configuration with a tab. Key specifications include a 4V gate threshold voltage and 7000 mOhm maximum drain-source resistance at 10V.
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| Basic Package Type | Through Hole |
| Package Family Name | TO-251 |
| Package/Case | IPAK |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 6.73(Max) |
| Package Width (mm) | 2.39(Max) |
| Package Height (mm) | 6.22(Max) |
| Seated Plane Height (mm) | 7.49(Max) |
| Pin Pitch (mm) | 2.29 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-251AA |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 400V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 1.8A |
| Material | Si |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 7000@10VmOhm |
| Typical Gate Charge @ Vgs | 13(Max)@10VnC |
| Typical Gate Charge @ 10V | 13(Max)nC |
| Typical Input Capacitance @ Vds | 270@25VpF |
| Maximum Power Dissipation | 50000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Typical Output Capacitance | 50pF |
| Cage Code | 18612 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
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