P-channel Power MOSFET, featuring a 400V maximum drain-source voltage and 1.8A maximum continuous drain current. This single-element silicon MOSFET operates in enhancement mode with a ±20V gate-source voltage rating. Housed in a TO-251AA (IPAK) plastic package with through-hole mounting, it offers a 3-pin configuration with a tab. Key specifications include a 4V gate threshold voltage and 7000 mOhm maximum drain-source resistance at 10V.
PackageIPAK
MountingThrough Hole
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Technical Specifications
Vishay SiHFU9310-E3 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-251
Package/Case
IPAK
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
6.73(Max)
Package Width (mm)
2.39(Max)
Package Height (mm)
6.22(Max)
Seated Plane Height (mm)
7.49(Max)
Pin Pitch (mm)
2.29
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-251AA
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
400V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
1.8A
Material
Si
Maximum Gate Threshold Voltage
4V
Maximum Drain Source Resistance
7000@10VmOhm
Typical Gate Charge @ Vgs
13(Max)@10VnC
Typical Gate Charge @ 10V
13(Max)nC
Typical Input Capacitance @ Vds
270@25VpF
Maximum Power Dissipation
50000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Typical Output Capacitance
50pF
Compliance
Cage Code
18612
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Vishay SiHFU9310-E3 Datasheet
Download the complete datasheet for Vishay SiHFU9310-E3 to view detailed technical specifications.
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