P-channel Power MOSFET, featuring a 400V maximum drain-source voltage and 1.8A maximum continuous drain current. This single-element silicon MOSFET operates in enhancement mode with a ±20V gate-source voltage rating. Housed in a TO-251AA (IPAK) plastic package with through-hole mounting, it offers a 3-pin configuration with a tab. Key specifications include a 4V gate threshold voltage and 7000 mOhm maximum drain-source resistance at 10V.
Vishay SiHFU9310-E3 technical specifications.
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