N-channel MOSFET transistor for through-hole mounting in a TO-247-3 package. Features a 500V drain-to-source voltage and 20A continuous drain current. Offers a low drain-to-source resistance of 225mR at a nominal gate-source voltage of 5V. Maximum power dissipation is 292W, with operating temperatures ranging from -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 80ns and fall time of 44ns.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay SIHG20N50C-E3 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Resistance | 225mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 44ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 24.99mm |
| Input Capacitance | 2.942nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 292W |
| Mount | Through Hole |
| Nominal Vgs | 5V |
| Number of Channels | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 270mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 80ns |
| Weight | 1.340411oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIHG20N50C-E3 Datasheet
Download the complete datasheet for Vishay SIHG20N50C-E3 to view detailed technical specifications.
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