N-channel Power MOSFET, 100V drain-source voltage, 4.3A continuous drain current. Features a maximum gate-source voltage of ±10V and a gate threshold voltage of 2V. This single-element transistor offers a low drain-source on-resistance of 540 mOhm at 5V Vgs. Housed in a TO-251AA IPAK package with 3 through-hole pins and a tab, it supports a maximum power dissipation of 2500 mW and operates from -55°C to 150°C.
PackageIPAK
MountingThrough Hole
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Technical Specifications
Vishay SiHLU110-E3 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-251 |
| Package/Case | IPAK |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 6.73(Max) |
| Package Width (mm) | 2.39(Max) |
| Package Height (mm) | 6.22(Max) |
| Seated Plane Height (mm) | 7.49(Max) |
| Pin Pitch (mm) | 2.29 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-251AA |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | ±10V |
| Maximum Continuous Drain Current | 4.3A |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Drain Source Resistance | 540@5VmOhm |
| Typical Gate Charge @ Vgs | 6.1(Max)@5VnC |
| Typical Input Capacitance @ Vds | 250@25VpF |
| Maximum Power Dissipation | 2500mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Typical Output Capacitance | 80pF |
Compliance
| Cage Code | 18612 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Vishay SiHLU110-E3 Datasheet
Download the complete datasheet for Vishay SiHLU110-E3 to view detailed technical specifications.
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