N-channel MOSFET, 400V drain-source voltage, 10A continuous drain current, and 600mΩ drain-to-source resistance. Features include a 3V threshold voltage, 12ns turn-on delay, 18ns turn-off delay, and 14ns fall time. Operates within a -55°C to 150°C temperature range with a maximum power dissipation of 147W. Packaged in a TO-220-3 through-hole mount with RoHS compliance.
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Vishay SIHP10N40D-GE3 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Resistance | 600mR |
| Drain to Source Voltage (Vdss) | 400V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.01mm |
| Input Capacitance | 526pF |
| Length | 10.51mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 147W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 600mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.211644oz |
| Width | 4.65mm |
| RoHS | Compliant |
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