N-Channel Power MOSFET featuring 500V drain-source voltage and 3A continuous drain current. Offers a low 3.2 Ohm drain-source resistance at 10V gate-source voltage. This through-hole component has a threshold voltage of 3V and exhibits fast switching speeds with turn-on delay of 12ns and fall time of 13ns. Maximum power dissipation is 104W, operating across a temperature range of -55°C to 150°C.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Vishay SiHU3N50D-GE3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Vishay SiHU3N50D-GE3 technical specifications.
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Resistance | 3.2R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 6.22mm |
| Input Capacitance | 175pF |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 104W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 3.2R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 11ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.01164oz |
| Width | 2.39mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay SiHU3N50D-GE3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
