N-Channel Power MOSFET featuring 500V drain-source voltage and 3A continuous drain current. Offers a low 3.2 Ohm drain-source resistance at 10V gate-source voltage. This through-hole component has a threshold voltage of 3V and exhibits fast switching speeds with turn-on delay of 12ns and fall time of 13ns. Maximum power dissipation is 104W, operating across a temperature range of -55°C to 150°C.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay SiHU3N50D-GE3 technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Resistance | 3.2R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 6.22mm |
| Input Capacitance | 175pF |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 104W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 3.2R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 11ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.01164oz |
| Width | 2.39mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SiHU3N50D-GE3 Datasheet
Download the complete datasheet for Vishay SiHU3N50D-GE3 to view detailed technical specifications.
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