N-channel MOSFET, 30V drain-source voltage, 40A continuous drain current. Features low 2.6mΩ drain-source on-resistance and 48W maximum power dissipation. Operates from -55°C to 150°C with a nominal gate-source voltage of 1.2V. Packaged in a surface-mount PPAK SO-8 (SOIC) for tape and reel delivery. RoHS compliant.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIR166DP-T1-GE3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Resistance | 2.6mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 4MR |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.34nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 48W |
| Mount | Surface Mount |
| Nominal Vgs | 1.2V |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 3.2mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1.2V |
| Turn-Off Delay Time | 44ns |
| Turn-On Delay Time | 28ns |
| Weight | 0.01787oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIR166DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR166DP-T1-GE3 to view detailed technical specifications.
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