N-channel MOSFET, 30V drain-source voltage, 40A continuous drain current. Features low 2.6mΩ drain-source on-resistance and 48W maximum power dissipation. Operates from -55°C to 150°C with a nominal gate-source voltage of 1.2V. Packaged in a surface-mount PPAK SO-8 (SOIC) for tape and reel delivery. RoHS compliant.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIR166DP-T1-GE3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
40A
Drain to Source Resistance
2.6mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
4MR
Fall Time
16ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
3.34nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
48W
Mount
Surface Mount
Nominal Vgs
1.2V
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
3.2mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1.2V
Turn-Off Delay Time
44ns
Turn-On Delay Time
28ns
Weight
0.01787oz
Compliance
RoHS
Compliant
Datasheet
Vishay SIR166DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR166DP-T1-GE3 to view detailed technical specifications.
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