The SIR330DP-T1-GE3 is a surface mount N-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 27.7W and is RoHS compliant. The device features a drain to source resistance of 5.6mR and a gate to source voltage of 20V.
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Vishay SIR330DP-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 35A |
| Drain to Source Resistance | 5.6mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.3nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 27.7W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 5.6mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| RoHS | Compliant |
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