P-channel MOSFET transistor featuring 50A continuous drain current and a -20V drain-to-source voltage. Offers a low 3.2mΩ maximum drain-source resistance. Operates with a 12V gate-to-source voltage and a -600mV threshold voltage. Designed for surface mount applications with a 39W maximum power dissipation and a 150°C maximum operating temperature.
MountingSurface Mount
PolarityP-CHANNEL
Power5W
Quick Jump:
Technical Specifications
Vishay SIR401DP-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 50A |
| Drain to Source Resistance | 3.2mR |
| Drain to Source Voltage (Vdss) | -20V |
| Fall Time | 100ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.12mm |
| Input Capacitance | 9.08nF |
| Length | 6.25mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 39W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 5W |
| Radiation Hardening | No |
| Rds On Max | 3.2mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -600mV |
| Turn-Off Delay Time | 300ns |
| Turn-On Delay Time | 140ns |
| Weight | 0.01787oz |
| Width | 5.26mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIR401DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR401DP-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
