N-Channel Power MOSFET featuring 40V drain-source voltage and 50A continuous drain current. Offers low 3.8mΩ drain-source resistance for efficient power handling. Designed for surface mount applications with a compact POWERPAK SOP-8 package. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 69W. Includes fast switching characteristics with turn-on delay of 28ns and fall time of 40ns. HALOGEN FREE and ROHS COMPLIANT.
MountingSurface Mount
PolarityN-CHANNEL
Power5.2W
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Technical Specifications
Vishay SIR416DP-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 50A |
| Drain to Source Resistance | 3.1mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Input Capacitance | 3.35nF |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 69W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 5.2W |
| Rds On Max | 3.8mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 42ns |
| Turn-On Delay Time | 28ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIR416DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR416DP-T1-GE3 to view detailed technical specifications.
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