N-channel MOSFET transistor featuring 40A continuous drain current and 40V drain-to-source voltage. Offers low on-resistance of 5mΩ at a nominal gate-source voltage of 2.4V. Designed for surface mounting with a maximum power dissipation of 39W and operating temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 19ns and fall time of 12ns. Packaged in tape and reel, this RoHS compliant component is suitable for demanding applications.
MountingSurface Mount
PolarityN-CHANNEL
Power5W
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Technical Specifications
Vishay SIR418DP-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
40A
Drain to Source Resistance
5mR
Drain to Source Voltage (Vdss)
40V
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.41nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
39W
Mount
Surface Mount
Nominal Vgs
2.4V
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
5W
Radiation Hardening
No
Rds On Max
5mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
2.4V
Turn-Off Delay Time
32ns
Turn-On Delay Time
19ns
Weight
0.01787oz
Compliance
RoHS
Compliant
Datasheet
Vishay SIR418DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR418DP-T1-GE3 to view detailed technical specifications.
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