N-channel MOSFET transistor featuring 40A continuous drain current and 40V drain-to-source voltage. Offers low on-resistance of 5mΩ at a nominal gate-source voltage of 2.4V. Designed for surface mounting with a maximum power dissipation of 39W and operating temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 19ns and fall time of 12ns. Packaged in tape and reel, this RoHS compliant component is suitable for demanding applications.
MountingSurface Mount
PolarityN-CHANNEL
Power5W
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Technical Specifications
Vishay SIR418DP-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 40A |
| Drain to Source Resistance | 5mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.41nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 39W |
| Mount | Surface Mount |
| Nominal Vgs | 2.4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 5W |
| Radiation Hardening | No |
| Rds On Max | 5mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 2.4V |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 19ns |
| Weight | 0.01787oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIR418DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR418DP-T1-GE3 to view detailed technical specifications.
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